例句與造句

1. Compound semiconductor materials
   化合物半導體材料
2. Binary compound semiconductor
   二元化合物半導體
3. 5 . a formula is deduced to calculate the built - in voltage of the compound semiconductor
   通過推導，得出一個計算化合物半導體異質結內建電勢的公式。
4. Zinc oxide is a ii - vi wide band - gap ( 3 . 3ev ) compound semiconductor with wurtzite crystal structure
   氧化鋅( zno )是一種具有六方結構的?族寬帶隙半導體材料，室溫下帶隙寬度高達3 . 3ev 。
5. Zinc oxide is a ii - iv wide band - gap ( 3 . 37ev ) compound semiconductor with wurtzite crystal structure
   氧化鋅( zno )是一種具有六方結構的的寬禁帶-族半導體材料，室溫下能帶帶隙eg為3 . 37ev 。
6. It's difficult to find compound semiconductor in a sentence. 用compound semiconductor造句挺難的
7. Zinc oxide is a ii - iv wide band - gap ( eg = 3 . 37ev ) compound semiconductor with wurtzite crystal structure
   六角纖鋅礦結構的氧化鋅是一種重要的寬帶隙-族半導體材料，室溫下帶隙為3 . 37ev 。
8. Plasma etching has been widely used in the etching process of si devices . now the study is focused on the microfabrication of compound semiconductor
   等離子體干法刻蝕在硅器件的微細加工中已經得到廣泛應用，目前研究的焦點集中在化合物半導體。
9. Research advances and applications of direct wafer bonding of - v compound semiconductors in optoelectronics device and its integration are generalized
   概括介紹了近年來- v族化合物半導體材料鍵合技術的最新研究進展及其在光電子器件和集成領域的應用。
10. It is the only one compound semiconductor whose native oxide is sio2 . therefore , the sic devices can be manufactured using the technology of the silicon processing , for example mos devices
    Sic是唯一可以氧化生長成sio _ 2的化合物半導體材料，這使得它可以運用si平面工藝條件進行sic器件的制造，特別制作mos器件方面。
11. Led stands for light emitting diode , a kind of semiconductor which is used to give and receive the electronic signal into infrared rays or light , using the characteristics of compound semiconductor
    半導體技術已經改變了世界，半導體照明技術將再一次改變我們的世界。隨著半導體照明光源在城市景觀商業大屏幕交通信號燈手機及
12. Zinc oxide as a wide band - gap ( 3 . 3ev ) compound semiconductor with wurtzite crystal structure , is gaining importance for the possible application as a semiconductor laser , due to its ultraviolet emission at room temperature
    寬禁帶zno半導體為直接帶隙材料，具有六方結構，較高的激子束縛能( 60mev ) ，室溫下帶隙寬度為3 . 3ev 。
13. Cadmium zinc telluride ( cd1 - xznxte or czt ) single crystal is one of the three element compound semiconductor materials with great performances used for the detection of x - ray and gamma - ray at room temperature
    碲鋅鎘( cd _ ( 1 - x ) zn _ xte ，簡寫czt )單晶體是一種性能優異的三元化合物半導體室溫核輻射探測器材料，具有閃鋅礦型的面心立方結構。
14. They have been widely used in optical - fiber communication , satellite communication , super high speed computer , high speed measurement instrument , mobile communication , etc . since gaas is compound semiconductor , it is difficult to achieve high quality gaas crystal
    Gaas器件與電路具有速度高、功耗低、噪聲小、耐高溫、抗輻射等優點，在光纖通信、衛星、超高速計算機、高速測試儀器、移動通信和航空航天等領域中有著重要的應用。
15. Aln is an important compound semiconductor material with wide band - gap , which has wurtzite structure too . because of their many excellent physical properties , aln thin films were applied in blue - uv emitting materials , epitaxy buffer layer , soi material and saw device with ghz band
    Aln具有許多優異的物理性能，在藍光、紫外發光材料及熱釋電材料、外延過渡層、 soi材料的絕緣埋層和ghz級聲表面波器件等方面有著重要的應用。
16. Besides the element semiconductors , such as si ( called the first generation semiconductor ) , and the compound semiconductors , such as gaas , inp ( called the second generation semiconductor ) , silicon carbide ( sic ) is one of the wide band - gap semiconductor materials ( called the third generation semiconductor )
    碳化硅( sic )材料是繼第一代元素半導體( si )和第二代化合物半導體( gaas 、 inp 、 gap等)材料之后的第三代寬帶隙半導體材料。
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